In this contribution, the electronic and linear and nonlinear optical properties of pyramid-shaped GaAs quantum dots (QDs) coupled to wetting layer (WL) in an Al 0.3 Ga 0.7 As matrix have been investigated. This nanostructure is relaxed from strain effects due to very small lattice-mismatching. Three transitions of P-to-S, WL-to-P, and WL-to-S were considered and the corresponding transition dipole moments, oscillator strengths, and linear and nonlinear optical properties regarding to these transitions were investigated as a function of the QD height. The results showed that for P-to-S transition, which is a purely in-plane-polarized transition, the dependence of electronic and optical properties on the size is moderate and can be neglected. But for WL-to-P and WL-to-S transitions, which are in-plane- and z-polarized transitions, respectively, the electronic as well as optical properties are strongly size-dependent. Furthermore, a competition between WL-to-S and WL-to-P transitions was observed when the QD size changed.