P-GaN layer was grown by metalorganic vapor phase epitaxy at 1000 o C with an LT-deposited AlN buffer layer. Bis(cyclopentadienyl) magnesium was used as a dopant and trimethyindium (TMIn) was simultaneously supplied. N 2 carrier gas was used during GaN growth. The contact of as-grown GaN:Mg sample was Ohmic only for In-doped GaN. Others showed Schottky behavior. The hole concentration was increased up to 5.0x10 1 7 cm - 3 at room temperature for In-doped samples. Moreover, with increasing TMIn flow rate, the biaxial strain in as-grown p-GaN was reduced and accordingly the hole concentration was increased.