New non-fatigue ferroelectric thin films of barium bismuth tantalate (BaBi 2 Ta 2 O 9 ) were synthesized in this work. These films were prepared on Pt/Ti/SiO 2 /Si substrates by the metalorganic decomposition method. As-deposited films were amorphous, and became well-crystallized after annealing at 700 o C. The annealed films exhibited fairly smooth surface and small grain size (around 10 nm). The measured dielectric constant and dissipation factor of BaBi 2 Ta 2 O 9 films at 10 kHz were 97.7 and 0.0257, respectively. The polarization-electric field hysteresis loops revealed the ferroelectric characteristics of BaBi 2 Ta 2 O 9 films. Furthermore, the fatigue test indicated that these films hardly degraded in the polarization after 10 9 switching cycles. Because of its ferroelectric properties and excellent fatigue resistance, BaBi 2 Ta 2 O 9 has great potential in becoming a new candidate material for the applications of ferroelectric random access memories.