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We fabricated impurity-doped β-FeSi 2 thin films with boron as p-type and arsenic as n-type dopants by sputtering method. The doping source materials were elemental boron chips and heavily arsenic-doped Si chips. They were put on two separate silicon targets and were co-sputtered with silicon during Fe/Si multilayer deposition. For boron-doped p-type β-FeSi 2 films, microstructures...
Our previous studies on the Ga doping of β-FeSi 2 films proved that Ga atoms could be an effective p-type dopant by using the molecular beam epitaxy (MBE) method. However, a crucial problem was the generation of a great number of pinholes when a high concentration of Ga atoms was introduced into the β-FeSi 2 films. In this report, we perform a qualitative investigation into Ga diffusion...
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