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We performed low temperature photoluminescence studies on nanometric thickness silicon single quantum wells. We show that electron hole recombination spectra are strongly dependent on the well thickness t and that carriers are in a strong quantum confinement regime for t⩽3nm. A set of fixed lines is identified and attributed to discrete and confined ground state levels or activated trap levels. A...
We have carried out photoluminescence measurements on the two dimensional electron hole liquid in perfectly crystalline Si quantum wells with SiO 2 barriers. The condensation of excitons in an EHL is strongly enhanced in 2D geometry. Formation of liquid nanodroplets with size varying with laser power is seen. Carriers are submitted to a quantum confinement regime for sufficiently small thickness...
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