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GaBiAs layers have been grown by molecular beam epitaxy at low temperatures (270–330°C) and have been characterized with several experimental techniques. Linear absorption and photoluminescence measurements have shown that the energy band gap decreases, compared with GaAs, and may reach 0.88eV, depending on growth conditions. An optical bleaching effect has been observed in open aperture z-scan measurements...
One-phonon and two-phonon contributions to polarization are determined for ZnTe crystals in the frequency range of 1–4THz using the existing experimental data on far-infrared absorption and neutron scattering. The two-phonon contribution in the 1.7THz band is higher than the first-order absorption related to the ion dipole (TO mode) resonance (comparable in the 3–4THz band). LA→TO phonon difference...
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