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With a combination of self-assembling formation of Si-quantum dots (QDs) and the silicidation of pre-grown Si-QDs promoted with an exposure to remote H 2 plasma without external heating after ultrathin Ni film formation, a hybrid nanodots structure consisting of Ni-silicide nanodots and Si-QDs was fabricated and applied to a floating gate in MOS (Metal-Oxide-Semiconductor) capacitors. The...
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