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We investigated the structural properties of Zn-polar ZnO films with low temperature (LT) ZnO and MgO buffer layers grown by plasma-assisted molecular beam epitaxy on (0001) c-Al 2 O 3 substrates using X-ray diffraction and transmission electron microscopy (TEM). The effects of MgO buffer layer thickness and LT ZnO buffer layer thickness were also examined. The optimum thicknesses...
In0.53Ga0.47As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In0.4Ga0.6As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In0.53Ga0.47As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that...
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