The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present the first investigation of the electrical properties (electron Hall mobilities and concentrations) of 1-μm thick relaxed Ge layers grown by surfactant-mediated epitaxy (SME) with the surfactant Sb on Si(111) substrates at growth temperatures between 640 o C and 720 o C. We found that with rising growth temperatures the Ge layer quality improves as is demonstrated by the...
Smooth, continuous, relaxed, and high quality Ge films have been grown on Si(111) using surfactant-mediated epitaxy (SME). Using high temperature SME we have reduced the Sb surfactant doping level by more than three orders of magnitude below the solid solubility. This enhanced surfactant segregation is attributed to the formation of an ordered (2x1)-Sb reconstruction on the Ge(111) growthfront. With...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.