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We have investigated the atomic hydrogen (H)-surfactant mediated growth of Ge on Si(111) surface, using coaxial impact-collision ion scattering spectroscopy (CAICISS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning electron microscopy (SEM). It has been found that the Ge thin film on the Si(111)1×1-H surface is flattened by the H-surfactant, whilst on the Si(111)7×7 surface...
Determination of atomic concentrations in thin films is one of the key problems in materials science. Time-of-Flight Elastic Recoil Detection Analysis is a powerful method for depth profiling of light and medium mass elements in near surface layers of material. However, due to poor detection efficiency those spectrometers are not commonly used for hydrogen analysis. We have performed some improvements...
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