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HfO 2 films were grown by atomic layer deposition from Hf[N(CH 3 ) 2 ] 4 and H 2 O on Si(100) substrates in the temperature range of 205–400 °C. Around 250 °C, nearly amorphous but dense films grew without marked dependence of their physical properties on the process parameters, such as Hf[N(CH 3 ) 2 ] 4 pulse length. Incomplete reaction...
SiO 2 thin films were grown by catalyzed atomic layer deposition (ALD) at low temperatures in a viscous flow reactor using sequential SiCl 4 and H 2 O exposures. Pyridine (C 5 H 5 N) was used as a catalyst for both reactant exposures. Micropulsing was employed to avoid possible film contamination by pyridinium chloride. Quartz crystal microbalance experiments...
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