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Quaternary (Ti,Zr) 1−x Al x N transition metal nitride films, with Al content x ranging from 0 to 0.37, were reactively sputter-deposited from individual metallic targets under Ar+N 2 plasma discharges on Si substrates at T s =270°C. The influence of Al addition on the crystal structure, phase formation, growth morphology and intrinsic stress development, electrical...
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