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In this work, Ge/Si hetero-nanocrystals are used as floating gates for nonvolatile memory application. The nanocrystals were fabricated by Ge selective growth on Si nanocrystals in a chemical vapor deposition system. The scanning electron microscopy measurement affirms the density and size of the nanocrystals to be 6×10 11 cm −2 and 7nm, respectively. Metal-oxide-semiconductor memory...
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