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Highly porous Ti and TiZrV film getters on (100) silicon substrates, grown by the glancing angle deposition of dc magnetron sputtering method, were used to study the activation process. The effect of activation temperature on the reducing degree of the porous Ti and TiZrV films were investigated by synchrotron radiation photoemission spectroscopy (SRPES). Elemental carbon absorbed on the surface of...
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