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In this work, epitaxial growth of Ge on Si is achieved using magnetron sputtering which is a low-cost and safe method suitable for large-scale production. Smooth surface with RMS roughness of 0.48nm is obtained at a low deposition temperature of 300°C. Cyclic thermal annealing is applied to the Ge film reducing the threading dislocation density (TDD) by two orders of magnitude. The in-plane strain...
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