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Crystalline-orientation-dependent carrier density in sputter-deposited tin-doped indium oxide (ITO) films was discovered by the epitaxial growth technique. Despite identical Sn concentration, (111)-epitaxial films always showed a lower carrier density compared to films of other crystalline orientations. A crystallographic investigation of the ITO material revealed that the crystalline growth along...
Room-temperature epitaxy of indium tin oxide (ITO) thin films was achieved on Si(111) substrates with an epitaxial CeO 2 ultrathin buffer using a pulsed laser deposition technique. The epitaxial CeO 2 buffer layer was also grown at room temperature. Reflection high-energy electron diffraction and pole figure X-ray diffraction analyses confirmed the formation of a double heteroepitaxial...
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