The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have investigated the preparation of β-FeSi 2 substrate and growth condition of β-FeSi 2 thin film on β-FeSi 2 (110) substrate by molecular beam epitaxy. The surface of the substrate was prepared by a wet-etching using HF(50%):HNO 3 (60%):H 2 O=1:1:5 solution at 25 °C. It is clear that the optimal etching period to obtain a flat surface was 3 min. The β-FeSi...
β-Ga 2 O 3 thin films were grown on (100)-oriented β-Ga 2 O 3 single crystal substrates by plasma-assisted molecular beam epitaxy. At the growth temperature over 800 °C and the Ga beam equivalent pressure of 1.1×10 −7 Torr, the grown surfaces exhibited clear step and terrace structures and the root-mean-square roughness of 0.5 nm in atomic force microscopy...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.