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In an attempt to complete the determination of the atomic structure of the {1120} planar defects which are found systematically in the interfacial area of (2H) GaN-AlN/6H-SiC, high resolution electron microscopy and atomistic calculations were used and an adequate model was chosen. It is found that the atomic structure corresponds to the ideal 1/2<1101>{1120} stacking fault model, with no volume...
NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(111) substrates and insertion of a Cu buffer layer were used. The 7x7 surface reconstruction of Si(111) was found out to be the crucial factor for...
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