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We have investigated Ge-rich dots on Si(100), grown by molecular beam epitaxy. Various growth parameters, including growth temperature, growth rate, composition of the dots, and thickness of the deposited layer, have been varied over a wide range in order to study their influence on the size and areal density of the dots. The samples have been analysed by atomic force microscopy, determining the areal...
AlAs y Sb 1-y and InAs y Sb 1-y ternaries have been grown by Molecular Beam Epitaxy on (001) GaAs and (001) InAs substrates. Growth parameters and composition of the layers were determined by reflection high-energy electron diffraction and single-crystal X-ray diffraction measurements, respectively. The compositional dependence of AlAs y ...
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