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We present the first investigation of the electrical properties (electron Hall mobilities and concentrations) of 1-μm thick relaxed Ge layers grown by surfactant-mediated epitaxy (SME) with the surfactant Sb on Si(111) substrates at growth temperatures between 640 o C and 720 o C. We found that with rising growth temperatures the Ge layer quality improves as is demonstrated by the...
We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing very efficient segregation and low doping levels even at...
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