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In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope...
Among the methods for enlarging the grain size of polycrystalline silicon (poly-Si) thin films, aluminium induced crystallization (AIC) of amorphous silicon is considered to be a very promising approach. In the AIC process, a thin a-Si layer on top of an aluminium layer crystallizes at temperatures well below the eutectic temperature of the Al/Si system (T eu =577 °C). By means of electron...
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