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The epitaxial SrAl 2 O 4 :Eu 2+ films with an out-of-plane orientation (200)//sapphire (0001) were achieved on c-plane sapphire substrates after post-annealing at 900–1000°C. The increase in the oxygen partial pressure during a sputtering led to the superior crystallinity and the change of Al/Sr atomic ratio of films, enhancing a green emission at 530nm under 340nm excitation...
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