A reliable TiSi 2 /TiN stack thickness model is an essential component for modeling the titanium salicide process, and such a model is not well-developed in current process simulators and in the literature. To determine this model, a design of experiments was set up to examine five process variables, namely, as-deposited Ti thickness, reaction temperature, reaction time, As + implanted dose, and the reaction ambient pressure. Weight and sheet resistance measurements were used to evaluate the thickness and efficiency of reaction (%Ti converted to silicide). A good first-order linear model was obtained, with a residual standard deviation (variation of model from data) of ∼30 . The model establishes quantitatively, that the TiSi 2 thickness is proportional to the as-deposited Ti thickness and reaction temperature, inversely proportional to the implanted As + dose, and weakly proportional to the reaction time. Since TiN and TiSi 2 are competing reactions, TiN exhibits inverse functional relationships with the variables, as compared with TiSi 2 . The efficiency of the reaction also has been quantified by the model. The ambient pressure has been found to have no impact on either the TiSi 2 /TiN stack thickness, or the reaction efficiency. The model has been validated by cross-sectional transmission electron microscopy, which agrees with the model prediction within experimental error.