A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation stage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111) Si(111) and dia 110 Si 110 has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.