Optically transparent Nd-doped CaTiO 3 thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO 3 (001) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300K. The carrier concentration and mobility of the film at room temperature are about 4.195x10 1 9 cm - 3 and 5.65cm 2 /Vs, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48nm by atomic force microscopy. The conductive mechanism of CaTi 0 . 9 Nb 0 . 1 O 3 films was discussed. The results show the large potential of this material in multilayer devices.