We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5mm 2 area 100nm thick circular NiSiC Schottky junction on a high purity 4HSiC epitaxial layer 115μm thick. Current signals from the detector with amplitudes up to 1.6A have been measured, achieving voltage signals over 80V on a 50Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250V DC bias under extreme operating conditions with no observable performance degradation.