AlGaAs/GaAs pin (p-Al 0 . 3 Ga 0 . 7 As/i-GaAs/n-Al 0 . 3 Ga 0 . 7 As) structures have been grown on GaAs(111)A substrates using only Si dopant. These pin structures have been confirmed by observing cathodoluminescence (CL) spectra, I-V characteristics and secondary ion mass spectroscopy (SIMS) profiles of the samples. Emission spectra of the samples provide a peak wavelength of 875 nm at 300 K; this peak is attributed to the emission in the i-GaAs layer. The profiles of these emission spectra become narrow at a low temperature of 14 K. Furthermore, the peak intensity increases drastically without a peak shift as the forward current is increased to 80 mA. This study shows that AlGaAs/GaAs double heterostructure light emitting diodes (LEDs) can be grown on GaAs(111)A using only Si dopant.