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Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films...
Vanadium oxide (V2O5-x) thin films with a thickness of about 4 nm were prepared by atomic layer deposition (ALD) to be used as a hole-transporting layer in an amorphous silicon solar cell. The ALD growth characteristics (growth rate, crystallinity, and surface morphology) of the V2O5-x films were investigated while exposed to different pulse times of ozone (O3), which was used as an oxidant. The effect...
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