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In order to find the effect of hydrogen (H) treatment on leakage current and current conduction mechanism in GaN nanorods (NRs) Schottky diode, GaN NRs surface was subjected to H plasma treatment. Experimental results showed that Schottky barrier height (Φb) increased, while the ideality factor (n) decreases by the H treatment. The Φb, n of as-grown GaN NRs were found to be 0.54 eV, 2.16, on the other...
The ZnO/graphene Schottky diode reveals a strong dependence of its photocurrent on the color of the illuminating lights (i.e., a dependence of photocurrent on the photon energy). As the photon energy increases, the magnitude of photocurrent is exponentially increased. Particularly, in comparison with the red-light illumination, the device clearly exhibits approximately 100-times-increased photocurrent...
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