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We report growth, structural, and electrical properties of epitaxial Ge layers on Si (001) wafers for next generation complementary metal oxide semiconductor devices. The epi-Ge layers were grown by solid source molecular beam epitaxy (MBE) at substrate temperatures (TG) varying from 200 °C to 500 °C. A two-step growth process, where an initial layer of thickness ∼30 nm is grown at a substrate temperature...
A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence...
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