Local structures around the dopant in heavily Cl doped ZnSe films were investigated by extended X-ray absorption structure (EXAFS) analysis. Measurements were performed for a carrier saturated sample (with N d -N a = 3 10 1 9 cm - 3 ) without and with post-growth annealing treatment. In addition to the bond identified as the normally substituted Cl atoms at Se sites, the bond with the length of 0.28 nm was observed for the non-annealed sample. In the annealed sample, only a bond of 0.29 nm was observed. We consider the 0.28-0.29 nm-bond corresponds to the Cl-Zn vacancy complex, which is formed by heavy doping or thermal treatment.