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Vertical transport in GaAs/ Ga 1−y Al y As barrier structures was investigated using current–temperature (I–T) measurements in the dark. The samples studied had 500 Å thick Ga 1−y Al y As (0≤y ≤0.26 ) linearly graded barriers between the n + -GaAs contacts and the Ga 0.74 Al 0.26 As central barrier containing Nw (=0, 4, 7 and 10) n-doped GaAs...
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