A report on the preparation of p-type As-doped ZnO (ZnO:As) thin films on glass substrate by E-beam evaporation technique is presented. Hall measurement showed that the as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. The films annealed at 400°C in Ar ambient exhibited the hole concentration of 3.63×10 17 cm −3 , resistivity of 4.08Ωcm and hole mobility of 4.21cm 2 /Vs, respectively. X-ray photoelectron spectroscopy measurement revealed that the As in the film is in oxidized state. As-related acceptor state is identified from neutral–acceptor bound exciton (A 0 , X) and donor–acceptor-pair (DAP) emissions using low temperature photoluminescence.