In this study, we fabricated two thermoelectric (TE) generation (TEG) devices based on p-Bi 0.4 Sb 1.6 Se 2.4 Te 0.6 and n-Bi 2 Se 0.6 Te 2.4 bulk TE materials. The overall dimensions of these devices, which comprise 9 (D 1 )-and 18(D 2 )-couples of legs connected and attached to alumina substrates by Ag paste–Cu plate–Ag paste electrodes, are 50mm ×25mm and 50mm ×50mm, respectively. The open-circuit voltage (V oc ) and the maximum output power (P max ) were estimated in terms of the temperature difference (ΔT) between hot (T H ) and cold (T C ) junctions as well as the number of p–n couples of the TEG devices. The significance of the resistances, including the internal resistance (R in ) and contact resistance (R c ) between legs and electrodes, are discussed. P max obtained with the D 2 device was 273mW under thermal conditions of T H =523K and ΔT=184K.