The thermal evolution of defects induced in 4H–SiC by multiple implantation of C ions was investigated by Low Temperature Photoluminescence in the temperature range 450–1000K. The photoluminescence spectra show sharp luminescent lines (alphabet lines) in the wavelength range 426–440nm upon irradiation and thermal treatment at 450K induces the appearance of a new line at 427nm (D I centre). The trend shown by the luminescence lines as a function of the temperature is quite complex. The alphabet lines intensity increases up to 850K, whereas at higher temperature decreases with an activation energy of 2.0eV, suggesting that the defect, responsible for these lines, is the Si-vacancy. The luminescence yield of D I centre is always increasing as a function of the temperature, with a higher slope from 750K, suggesting a correlation to the reconfiguration and to the annealing of point defects.