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Erbium-doped silicon-rich silica is a material that has generated great interest, as it holds considerable promise for practical silicon-based optical sources. There are numerous reports of sensitization of erbium 1.5μm luminescence by silicon nanoclusters (Si nc), and it is now accepted that this process increases the effective absorption cross-section of Er ions by three orders of magnitude. There...
SnO 2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol–gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO 2 , under excitation at 280nm, shows only one broad emission at 395nm, which is related to oxygen vacancies. The PL of Er 3+ ions was found to be enhanced...
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