We present the results of ion channeling and 3.045 MeV He + oxygen resonant backscattering along with the results of magnetic and electric characterization experiments performed on thin films of Co doped TiO 2 and La 0 . 5 Sr 0 . 5 TiO 3 oxides deposited on (001) LaAlO 3 substrates using the pulsed laser deposition technique. These films exhibit Curie temperature well above 300 K and hence offer potential use for spintronic devices. In the case of Co doped TiO 2 films the magnetic data have been understood in the light of channeling results, which showed non-substitutionality of Co atoms for the films deposited at 700 o C, and their incorporation in the matrix by either annealing at a higher temperature of 875 o C or deposition at this temperature. In the case of the Co doped La 0 . 5 Sr 0 . 5 TiO 3 , the resistivity data for the films deposited at different oxygen pressures correlate well with the oxygen contents of the films obtained by resonant backscattering.