Crossing point current of forward I-V curves (I X i n g ) at 25 and 125 o C was measured and simulated for 4.5 kV/320 A silicon power P-i-N diode irradiated by electron, proton and combined electron-proton irradiation. The proton and electron irradiation are shown to decrease the magnitude of I X i n g which is beneficial for paralleling of diodes under surge conditions. With increasing irradiation dose this effect saturates. High doses of combined electron-proton treatment can even lead to an increased magnitude of I X i n g above that of the unirradiated device. To achieve agreement of electro-thermal simulation with experiment, temperature dependence of the capture cross sections σ n and σ p of the deep level dominant in condition of heavy injection had to be taken into account. With the aid of simulation, the dependencies I X i n g vs. dose are explained.