β-V 2 O 5 films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V 2 O 5 films in the growth process. When the deposition temperature was below 500°C, the sputtered film exhibited the α-V 2 O 5 structure. However, β-V 2 O 5 film was successfully obtained at 550°C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable β-V 2 O 5 phase formed. The thermal stability of β-V 2 O 5 film was studied by micro-Raman spectroscopy. The structure of sputtered β-V 2 O 5 film was unstable under high temperature conditions (beyond 500°C).