The silicon oxide nanowires (SiOxNWs) were grown by the thermal process of nickel (Ni) nanoparticles (NPs) deposited on silicon (Si) wafers in mixed gasses of nitrogen (N 2 ) and hydrogen (H 2 ) at temperatures of 900, 1000, and 1100°C. Each NW was about 20–100nm in diameter embedding with Ni NPs inside, and its structure was amorphous. The ratio of Si and oxygen (O) was 1:2.18. Blue emission spectrum was observed at the wavelength of 450nm and the peak intensity increased with the increasing process temperature.