Spin-valve magnetic tunnel junctions (SV-MTJs) with the structure: substrate Si(100)/SiO2 47nm/ buffer layers /IrMn 12nm/CoFe 15nm/Al–O 1.4nm/NiFe 3nm/Ta 5nm were prepared with four different buffers: (a) Cu 25nm, (b) Ta 5nm/Cu 25nm, (c) Ta 5nm/Cu 25nm/Ta 5nm/Cu 5nm and (d) Ta 5nm/Cu 25nm/Ta 5nm/NiFe 2nm/Cu 5nm in order to investigate crystal texture of the MTJs. The junctions were characterized by XRD θ–2θ scans and rocking curve (ω scans). The multilayer stack is textured in columnar-like fashion, which produces roughness. The texture and the roughness modified strongly the tunnel magnetoresistance (TMR), interlayer Néel and the exchange bias coupling fields in the SV-MTJs. The design of buffer layers allows to optimize the exchange coupling and tunneling parameters for magnetoelectronics devices.