The recrystallization process of the interface-modified barrier (IMB) has been successfully observed by reflection high energy electron diffraction (RHEED) and transmission electron microscopy. A halo RHEED pattern showing the existence of an amorphous phase was changed to three types of patterns by changing the ion bombardment conditions. Two cases are observed, one leads to recrystallization to YBa 2 Cu 3 O 7 - δ , the other leads to two types of cubic or pseudo-cubic structure regions. Ramp-edge Josephson junctions with an IMB fabricated under optimum conditions exhibited RCSJ-like I-V curves with a typical I c R n product at 4.2 K of 1.0-3.2 mV. It is also shown that the recrystallization of the barrier from an amorphous layer strongly depends on the actual bombardment energy of ions incident on the ramp surface. The difference of I c may be also explained by the difference in the barrier microstructure which depends on the ion bombardment energy.