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To clarify relationship between crystallographic and electronic structures in pentacene polycrystalline films grown on SiO 2 , in-plane crystallite size and random strain of the films were analyzed by grazing incidence X-ray diffraction (GIXD) using synchrotron radiation source. The results indicate that the diffraction peak width is not determined by random strain but by crystallite size...
With the use of the stencil lithography, we fabricated pentacene thin-film transistors prepared directly on thermally oxidized silicon gates with channel lengths ranging from 2 to 600μm. By performing 4-probe measurements or by using the transfer line method on these field-effect transistors, we were able to separate the respective contributions of the channel and the contacts to the transistor performance...
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