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This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO 2 as the...
We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230nm-thick double polymer dielectric composed of 30nm-thin low-k poly-4-vinyphenol (PVP) and 200nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF–TrFE)] dielectric on polyethersulfone (PES) films. Our 230nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2MV/cm, a high capacitance...
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