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Here we report on low-supply voltage and high-performance regioregular poly-(3-hexythiophene) (P3HT) organic thin-film transistors (OTFT) using a thin atomic layer deposited (ALD) HfO 2 gate dielectric. For the capacitance–voltage characteristics, the measured gate capacitance was ∼392nF/cm 2 at 1kHz and the dielectric constant was estimated ∼18.5 for a 40nm thick ALD HfO 2 ...
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