II-VI materials have numerous optoelectronic applications such as HgCdTe for IR imaging and ZnSe for full color flat panel, optical recording and under-water communications. p-Type doping in II-VI materials was one of the major technological hurdles. However, significant progress has been made in II-VI molecular-beam epitaxy (MBE) technology over the last two years. In the narrow bandgap HgCdTe arena, device quality materials have been grown with alloy compositions required for short- to long-wavelength applications. Specifically, high performance IR imaging arrays (64 64) have recently been fabricated using MBE-grown double layer p-on-n structure. In addition, dual-band detectors and injection IR diode lasers have been demonstrated recently also with the HgCdTe MBE technology. In the wide bandgap arena, many MBE groups worldwide have been extensively pursuing research in ZnSe-related compounds. It is anticipated that the improvement in II-VI MBE technology will continue to accelerate in the next few years for manufacturing of optoelectronic devices.