This paper reports the result of an investigation into electromigration-driven morphological evolution of inclusions in finite scale thin-film interconnects using phase field method. The results show that morphological evolution and migration of an inclusion are proportional to the electric field strength applied on thin-film interconnects, and that inclusions with anisotropic diffusion interface move slower than those with isotropic interface under the identical electric field, and show irregular patterns when the inclusion is subjected to perturbation.