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Ge wafer irradiated at room temperature with high energetic heavy ions ranging from 165 MeV Ni to 266 MeV Au show a swelling of the bombarded region. The corresponding volume expansion reaches values up to 30% of the irradiated volume. In cross section SEM as well as cross section TEM measurements it is found that the volume expansion is due to a buried porous layer with a sponge-like structure. The dose dependence of the swelling of the germanium samples and the void formation in amorphous Ge will be discussed.