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Several H-vibrational lines with frequencies between 3050 and 3250cm -1 have been observed in as-grown layers of GaN grown by hydride vapor phase epitaxy. H + and D + were also implanted into GaN samples with a range of energies up to 11MeV. The implants gave rise to the same lines seen in the as-grown samples and a number of new lines in addition to those seen previously. A vibrational line at 2208cm -1 was produced by both H + and D + implantation and is assigned to a strongly bonded molecular complex.