Critical nitride-based p-n junction issues relating to wide bandgap bipolar device performance include minority carrier lifetime, defect related current characteristics and ohmic contact properties. Recent developments in p-GaN deposition processes resulted in GaN p-i-n UV photodetectors with improved deep UV responsivity, visible light rejection and shunt resistance characteristics. From the device data, the electron diffusion length in p-GaN doped at 1.10 1 8 cm - 3 was estimated to be 790 9, and the minority carrier lifetime in the p-GaN was estimated to be 24 ps to 0.24<space>ns. Improved junction electrical characteristics were achieved using MBE deposition on GaN buffers grown by MOCVD. NiAu ohmic contacts were also made to p-GaN with specific contact resistances less than 10 - 4 Ω.cm 2 .